t4 - lds -010 2 , rev . 3 (12 1485 ) ?201 2 microsemi corporation page 1 of 9 2n 7224 , 2n7225, 2n7227 and 2n 7228 compliant n- channel mosfet qualified per mil - prf - 19500/ 5 92 qualified levels : jan, jantx , and jantxv description this family of switching transistors is military qualified up t o the jan txv level for high - reliability applications . these devices are also available in a low profile u surface mount package . microsemi also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through - hole and surface - mount packages. to - 254aa package also available in : u (smd - 1 or to - 2 67 ab ) package ( surface mount ) 2n 7224u & 2n 7228u importa nt: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n 7224 , 2n7225, 2n7227 and 2n 7228 number series. ? jan, jantx, and jantxv qualifications are available per mi l - prf - 19500/ 5 92. (see part nomenclature for all available options.) ? rohs compliant by design . applications / benefits ? l ow - profile design. ? military and other high - reliability applications. maximum ratings @ t a = +25oc unless otherwise stated msc ? law rence 6 lake street, lawrence, ma 01841 tel: 1 -800- 446- 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc ? ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters / test conditions symbol value unit operating & storage junction temperature range t j & t stg - 55 to +150 c thermal resistance junction - to - case r ? jc 0.83 o c/w total power dissipation @ t a = +25 c @ t c = +25 c (1) p t 4 150 w gate - source voltage, dc v gs 20 v drain current, dc @ t c = +25 oc ( 2 ) 2n 7224 2n 7225 2n 7227 2n 7228 i d1 34.0 27.4 14.0 12.0 a drain current, dc @ t c = +100 oc ( 2 ) 2n 722 4 2n 7225 2n 7227 2n 7228 i d2 21 17 9 8 a off - state current (peak total value) ( 3 ) 2n 7224 2n 7225 2n 7227 2n 7228 i dm 136 110 56 48 a (pk) source current 2n 7224 2n 7225 2n 7227 2n 7228 i s 34.0 27.4 14.0 12.0 a notes: 1. derated linearly by 1.2 w/oc for t c > + 25 oc . 2. the following formula derives the maximum theoretical id limit. id is limited by package and internal wires a nd may also be limited by pin diameter: 3. i dm = 4 x i d1 as calculated in note 2.
t4 - lds -010 2 , rev . 3 (12 1485 ) ?201 2 microsemi corporation page 2 of 9 2n 7224 , 2n7225, 2n7227 and 2n 7228 mechanical and packaging ? case: ceramic an d g old over n ickel p lated s teel . ? terminals: gold over n ickel p lated t ungsten/ c opper . ? marking: part number, date code, and polarity symbol. ? weight: 6.5 grams . ? see p ackage d imensions on last page. part nomenclature jan 2n 7224 reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial jedec type number (see electrical characteristics table) symbols & definitions symbol de finition di/dt rate of c hange of d iode c urrent while in reverse - recovery mode, recorded as maximum value. i f forward c urrent r g gate d rive i mpedance v dd drain s upply v oltage v ds drain s ource v oltage, dc v gs gate s ource v oltage, dc
t4 - lds -010 2 , rev . 3 (12 1485 ) ?201 2 microsemi corporation page 3 of 9 2n 7224 , 2n7225, 2n7227 and 2n 7228 electrical char acteristics @ t a = +25 c, unless otherwise noted parameters / test conditions symbol min. max. unit off character is tics drain - source breakdown voltage v gs = 0 v, i d = 1.0 ma 2n7224 2n7225 2n7227 2n7228 v (br)dss 100 200 400 500 v gate - sour ce voltage (threshold) v ds v gs , i d = 0.25 ma v ds v gs , i d = 0.25 ma, t j = +125c v ds v gs , i d = 0.25 ma, t j = - 55c v gs(th)1 v gs(th)2 v gs(th)3 2.0 1.0 4.0 5.0 v gate current v gs = 20 v, v ds = 0 v v gs = 20 v, v ds = 0 v, t j = +125c i gss1 i gss2 100 200 na drain current v gs = 0 v, v ds = 80 v v gs = 0 v, v ds = 160 v v gs = 0 v, v ds = 320 v v gs = 0 v, v ds = 400 v 2n7224 2n7225 2n7227 2n7228 i dss1 25 a drain current v gs = 0 v, v ds = 80 v, t j = +125 c v gs = 0 v, v ds = 160 v, t j = +125 c v gs = 0 v, v ds = 320 v, t j = +125 c v gs = 0 v, v ds = 400 v, t j = +125 c 2n7224 2n7225 2n7227 2n7228 i dss2 0.25 ma static drain - source on - state resistance v gs = 10 v, i d = 2 1 .0 a pulsed v gs = 10 v, i d = 1 7 .0 a pulsed v gs = 10 v, i d = 9.0 a pulsed v gs = 10 v, i d = 8.0 a pulsed 2n7224 2n7225 2n7227 2n7228 r ds(on)1 0.070 0.100 0.315 0.415 ? static drain - source on - state resistance v gs = 10 v, i d = 3 4 .0 a pulsed v gs = 10 v, i d = 27.4 a pulsed v gs = 10 v, i d = 14.0 a pulsed v gs = 10 v, i d = 12.0 a pulsed 2n7224 2n7225 2n7227 2n7228 r ds(on)2 0.081 0.105 0.415 0.515 ? static drain - source on - state resistance t j = +125c v gs = 10 v, i d = 2 1 .0 a pulsed v gs = 10 v, i d = 1 7 .0 a pulsed v gs = 10 v, i d = 9.0 a pulsed v gs = 10 v, i d = 8.0 a pulsed 2n7224 2n7225 2n7227 2n7228 r ds(on)3 0.11 0.17 0.68 0.90 ? diode forward voltage v gs = 0 v, i d = 3 4 .0 a pulsed v gs = 0 v, i d = 27.4 a pulsed v gs = 0 v, i d = 14.0 a pulsed v gs = 0 v, i d = 12.0 a pulsed 2n7224 2n7225 2 n7227 2n7228 v sd 1.8 1.9 1.7 1.7 v
t4 - lds -010 2 , rev . 3 (12 1485 ) ?201 2 microsemi corporation page 4 of 9 2n 7224 , 2n7225, 2n7227 and 2n 7228 electrical characteristics @ t a = +25 c, unless otherwise noted (continued) dynamic characteristics parameters / test conditions symbol min. max. unit gate charge: on - state gate charge v gs = 10 v, i d = 3 4 .0 a, v ds = 50 v v gs = 10 v, i d = 27.4 a, v ds = 50 v v gs = 10 v, i d = 14.0 a, v ds = 50 v v gs = 10 v, i d = 12.0 a, v ds = 50 v 2n7224 2n7225 2n7227 2n7228 q g(on) 125 115 110 120 nc gate to source charge v gs = 10 v, i d = 3 4 .0 a, v ds = 50 v v gs = 10 v, i d = 27.4 a, v ds = 50 v v gs = 10 v, i d = 14.0 a, v ds = 50 v v gs = 10 v, i d = 12.0 a, v ds = 50 v 2n7224 2n7225 2n7227 2n7228 q gs 22 22 18 19 nc gate to drain charge v gs = 10 v, i d = 3 4 .0 a, v ds = 50 v v gs = 10 v, i d = 27.4 a, v ds = 50 v v gs = 10 v, i d = 14.0 a, v ds = 50 v v gs = 10 v, i d = 12.0 a, v ds = 50 v 2n7224 2n7225 2n7227 2n7228 q gd 65 60 65 70 nc switching characteristics parameters / test conditions symbol min. max. unit turn - on delay time i d = 34 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 50 v i d = 27.4 a, v gs = 10 v, r g = 2.35 ? , v dd = 100 v i d = 14 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 200 v i d = 12 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 250 v 2n7224 2n7225 2n7227 2n7228 t d(on) 35 ns rinse time i d = 34 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 50 v i d = 27.4 a, v gs = 10 v, r g = 2.35 ? , v dd = 100 v i d = 14 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 200 v i d = 12 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 250 v 2n7224 2n7225 2n7227 2n7228 t r 190 ns turn - off delay time i d = 34.0 a, v gs = 10 v, r g = 2.35 ? , v dd = 50 v i d = 27.4 a, v gs = 10 v, r g = 2.35 ? , v dd = 100 v i d = 14 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 200 v i d = 12 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 250 v 2n7224 2n7225 2n7227 2n7228 t d(off) 170 ns fall time i d = 34 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 50 v i d = 27.4 a, v gs = 10 v, r g = 2.35 ? , v dd = 100 v i d = 14 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 200 v i d = 12 .0 a, v gs = 10 v, r g = 2.35 ? , v dd = 250 v 2n7224 2n7225 2n7227 2n7228 t f 130 ns diode rever se recovery time di/dt 100 a/s, v dd 30 v, i f = 3 4 .0 a di/dt 100 a/s, v dd 30 v, i f = 27.4 a di/dt 100 a/s, v dd 30 v, i f = 14.0 a di/dt 100 a/s, v dd 30 v, i f = 12.0 a 2n7224 2n7225 2n7227 2n7228 t rr 500 950 1200 1600 ns
t4 - lds -010 2 , rev . 3 (12 1485 ) ?201 2 microsemi corporation page 5 of 9 2n 7224 , 2n7225, 2n7227 and 2n 7228 graphs t 1 , rectangle pulse duration (sec onds ) figure 1 thermal impedance curves thermal response (z jc )
t4 - lds -010 2 , rev . 3 (12 1485 ) ?201 2 microsemi corporation page 6 of 9 2n 7224 , 2n7225, 2n7227 and 2n 7228 graphs (continued) figure 2 ? maximum d rain c urrent vs c ase t emperature g raphs t c case temperature (oc) t c case temperature (oc) for 2n 7224 for 2n 7225 t c case temperature (oc) t c case temperature (oc) for 2n 7227 for 2n 7228 i d drain current (amperes) i d drain current ( a mperes ) i d drain current (a mperes ) i d drain current (a mperes )
t4 - lds -010 2 , rev . 3 (12 1485 ) ?201 2 microsemi corporation page 7 of 9 2n 7224 , 2n7225, 2n7227 and 2n 7228 graphs (continued) figure 3 ? maximum s afe o perating a rea v ds , drain - to - source voltage (volts) for 2n 7224 v ds , drain - to - source voltage (volts) for 2n 7225 i d , drain current (amperes) i d , drain current (amperes)
t4 - lds -010 2 , rev . 3 (12 1485 ) ?201 2 microsemi corporation page 8 of 9 2n 7224 , 2n7225, 2n7227 and 2n 7228 graphs (continued) v ds , drain - to - source voltage (vo lts) for 2n 7227 v ds , drain - to - source voltage (volts) for 2n 7228 i d drain current (amperes) i d drain current (amperes)
t4 - lds -010 2 , rev . 3 (12 1485 ) ?201 2 microsemi corporation page 9 of 9 2n 7224 , 2n7225, 2n7227 and 2n 7228 package dimensions notes: dimensions notes 1. dimensions are in inches. 2. millimeters are given for general information only. 3. glass meniscus included in dimension d and e. 4. all t erminals are isolated from case. 5. in accordance with asme y14.5m, diameters are equivalent to x symbology. ltr inch millimeters min max min max bl .535 .545 13.59 13.84 ch .249 .260 6.32 6.60 ld .035 .045 0.89 1.14 ll .510 .570 12.95 14.48 lo .150 bsc 3.81 bsc ls .150 bsc 3.81 bsc mhd .139 .149 3.53 3.78 mho .665 .685 16.89 17.40 tl .790 .800 20.07 20.32 3, 4 tt .040 .050 1.02 1.27 tw .535 .54 5 13.59 13.84 3, 4 term 1 drain term 2 source term 3 gate
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